This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively. When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor. However, at a normal operating collector current the typical value of gain will be 110. Since it is very high it is normally used for amplification purposes. It has a maximum gain value of 400 this value determines the amplification capacity of the transistor normally S8050. Production specification Silicon Epitax ial Planar Transistor FEATURES Hig h Collector Current. The device is designed for audio amplifier and general.
S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. S8050 J3Y NPN SOT-23 SMD 0.5A 40V Transistor. S8050 is a NPN surface mount epitaxial silicon transistor with low voltage, high current small signal. Part S8050 Datasheet Slkor(SLKORMICRO Elec.) S8050 Description 100nA 25V 300mW 500mA 150MHz 600mV500mA,50mA NPN +150(Tj) SOT-23 Bipolar Transistors - BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT Datasheet Slkor(SLKORMICRO Elec.) S8050 RoHS Collector Cut-Off Current (Icbo) 100nA Collector. S8050 NPN TRANSISTOR SOT-23 1 2 3 MAXIMUM RATINGS (Ta25unless otherwise noted) CLASSIFICATION OF hFE1 FEATURES Complimentary to S8550 Collector Current: IC0.5A ELECTRICAL CHARACTERISTICS (TA 25☌ unless otherwise noted.) 1.BASE 2.EMITTER 3. Note: Complete Technical Details can be found at the S8050 datasheet given at the end of this page. Buy ASPIAIG-S8050-331M-T - Abracon - Power Inductor (SMD), AEC-Q200, 330 H, 650 mA, Shielded, 900 mA, ASPIAIG-S8050. Manufacturer Slkor(SLKORMICRO Elec.) Mfr. This database allows to quickly find the part number of a SMD component when you have only the marking code. High Used in push-pull configuration doe Class B amplifiers When repairing an unknown electronic board, it becomes so difficult to know what is the exact type of a given component.SS8050 NPN Epitaxial Silicon Transistor with 2 W Output. Continuous Collector current (IC) is 700mA Buy lowest price S8050 8050 J3Y SOT-23 NPN SMD Transistor in Bangladesh.Low Voltage, High Current NPN Transistor.S8050 is one of the most commonly used semiconductor transistor models in circuit hardware design.
S8050 smd pdf#
There you can find the original documents of each component in PDF format.S8050 is a low-power NPN silicon tube with a maximum collector-base (Vcbo) voltage of 40V and a collector current (Ic) of 0.5A. Many companies are involved in the production of the S8050 transistor, Datasheet from all of them can be downloaded in a special section on this link. The complementary pair for the device in question is S8550. The S8050 transistor can be replaced with equivalents: The other values are given in a separate column of the table, which is called “Measurement modes”.Įlectrical characteristics of the transistor S8050 (at T = +25 ☌) Parameterĭepending on the current transfer ratio, S8050 transistors in SMD package J3Y are divided into three types: They were measured at a temperature of +25☌. operating temperature from -55 to +150☌.Īlso important parameters to pay attention to are the electrical specifications.Chanzon SMD Fast Switching/Schottky/Rectifier Diode Assorted Kit (15 Values Total 150pcs: M1 M4 M7 S1M S2M S3M SS14 SS16 SS24 SS26 SS34 SS36 RS1M US1M LL4148) Electronic Component Assortment Set. power, dissipated at collector junction This item: 100PCS SMD S8050 J3Y NPN SMD Transistor SOT-23.
voltage between E-B V EBO (U eb max) – 5 V S8050 is a NPN surface mount epitaxial silicon transistor with low voltage, high current small signal.The device is designed for audio amplifier and general.voltage between C-E V CEO (U ce max) – 25 V.voltage between C-B V CBO (U cb max) – 40 V.All maximum S8050 specifications were measured at ambient temperature +25☌, here they are: Let’s start with the maximum possible values, exceeding these parameters is unacceptable and leads to the transistor failure. In the figure you can see how the legs of the device in question are arranged in both versions. Let’s look at the pinout of the S8050 in a TO-92 hole-mount package and a SOT-23 hinged package.
0 kommentar(er)
